PART |
Description |
Maker |
CY7C1461AV33-100AXC CY7C1463AV33-100AXC CY7C1461AV |
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL垄芒 Architecture 36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构6-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM) 36兆位米x 36 / 2 M中的x 18/512K × 72)流体系结构,通过与总线延迟(带总线延迟结构的的36 - Mbit通过的SRAM100万x 36 / 2 M中的x 18/512K × 72)流的SRAM
|
Cypress Semiconductor Corp.
|
CY7C1371D-100AXI CY7C1371D-100BGI CY7C1373D-100BZI |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PQFP100 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 18兆位(为512k × 36/1M × 18)流体系结构,通过与NoBLTM的SRAM 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA119 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PQFP100 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA119
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
GS882Z18AB-250 GS882Z18AB-133 GS882Z18AD-133 GS882 |
250MHz 5.5ns 512K x 18 9Mb pipelined and flow through synchronous NBT SRAM 133MHz 8.5ns 512K x 18 9Mb pipelined and flow through synchronous NBT SRAM 166MHz 7ns 512K x 18 9Mb pipelined and flow through synchronous NBT SRAM 200MHz 6.5ns 512K x 18 9Mb pipelined and flow through synchronous NBT SRAM 200MHz 6.5s 512K x 18 9Mb pipelined and flow through synchronous NBT SRAM
|
GSI Technology
|
CY7C1383C-117BGC CY7C1383C-100AC CY7C1383C-100BZI |
18-Mb (512K x 36/1M x 18) Flow-Through SRAM 1M X 18 STANDARD SRAM, 8.5 ns, PQFP100 18-Mb (512K x 36/1M x 18) Flow-Through SRAM 1M X 18 STANDARD SRAM, 8.5 ns, PBGA165
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
CY7C1381DV25-100AXC CY7C1383DV25-100AXC CY7C1381DV |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM
|
Cypress Semiconductor
|
IDT71T75702 IDT71T75702S75BG8 IDT71T75702S75BGI ID |
2.5V 512K X 36 ZBT Synchronous 2.5V I/O Flow-through SRAM
|
IDT
|
CY7C1361C-133AXI CY7C1363C-133BZI CY7C1361C-100AJX |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM
|
CYPRESS[Cypress Semiconductor]
|
GVT71256ZB36 |
(GVT7xxxx) 256K x 36 / 512K x 18 Flow Thru SRAM
|
Cypress Semiconductor
|
CY7C1361C |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM
|
Cypress Semiconductor
|
IS61NVF51236-6.5TQL IS61NVF51236-6.5TQL-TR IS61NVF |
256K x 72, 512K x 36 and 1M x 18 18Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 1M X 18 ZBT SRAM, 6.5 ns, PBGA165 256K x 72, 512K x 36 and 1M x 18 18Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 1M X 18 ZBT SRAM, 6.5 ns, PQFP100 256K x 72, 512K x 36 and 1M x 18 18Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 1M X 18 ZBT SRAM, 7.5 ns, PQFP100 256K x 72, 512K x 36 and 1M x 18 18Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 1M X 18 ZBT SRAM, 7.5 ns, PBGA165 256K x 72, 512K x 36 and 1M x 18 18Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 512K X 36 ZBT SRAM, 7.5 ns, PQFP100 256K x 72, 512K x 36 and 1M x 18 18Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 512K X 36 ZBT SRAM, 7.5 ns, PBGA165
|
天津新技术产业园区管理委员会 Integrated Silicon Solution, Inc.
|
MT58L512L18F |
8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM
|
Micron Technology, Inc.
|
AS5SS512K36DQ-8.5_IT AS5SS512K36DQ-8.5_XT AS5SS512 |
512K x 36 SSRAM Flow-Through SRAM No Bus Latency
|
Austin Semiconductor
|